J
John Williams
Guest
I wrote:
Anyway, a very helpful Insight engineer has helped to resolve this one.
It's just a case of changing the IOSTD constraint to LVCMOS25, and
trusting the source termination resistors on the P160 module to
sufficiently reduce the 3.3V driving voltages down to the IO's
clamping/protection thresholds. This Xilinx answer says more:
http://www.xilinx.com/xlnx/xil_ans_display.jsp?BV_UseBVCookie=yes&getPagePath=20492
Cheers,
John
Hmm, perhaps I should stop talking to myself so much.I wrote:
However, when placed in this slot the P160 MAC phy_rx_d<3> pin, defined
as 3.3V LVCMOS, connects to FPGA pin AD13 which is on the same IO bank
as most of the main board's DDR signals (2.5V SSTL) e.g.:
Any ideas on how I might get past this? I could fudge the IOSTD
constraints to force it to map, but intermixing 2.5V FPGA pins with 3.3V
signals seems like a bad idea.
Anyway, a very helpful Insight engineer has helped to resolve this one.
It's just a case of changing the IOSTD constraint to LVCMOS25, and
trusting the source termination resistors on the P160 module to
sufficiently reduce the 3.3V driving voltages down to the IO's
clamping/protection thresholds. This Xilinx answer says more:
http://www.xilinx.com/xlnx/xil_ans_display.jsp?BV_UseBVCookie=yes&getPagePath=20492
Cheers,
John