D
DaveC
Guest
On Thu, 20 Nov 2003 9:20:32 -0800, DaveC wrote
(in message <0001HW.BBE237E000C60504F0080600@news.individual.net>:
By using a single, high-power FET, one can reach equivalent *powers* as a
multi-FET design, but without the inherent distortions.
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DaveC
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(in message <0001HW.BBE237E000C60504F0080600@news.individual.net>:
Hmm... Better to say:By using a single, high-power FET one can reach equivalent results as a
multi-FET design.
By using a single, high-power FET, one can reach equivalent *powers* as a
multi-FET design, but without the inherent distortions.
--
DaveC
me@privacy.net
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