B
Bill Bowden
Guest
"Ingvar Esk" <ingvar.esk@ericsson.com> wrote in message news:<chpgd7$64d$1@newstree.wise.edt.ericsson.se>...
of collector current. Like you say, the base voltage relative to the
emitter will usually be 600 to 700 mV, or maybe a bit more.
A general rule of thumb to calculate voltage gain is
40 times the difference of supply voltage to collector voltage.
So, if the transistor were biased such that the collector is 3
volts and the supply is 6 volts, you get a voltage gain
around (6-3)*40 = 120. So, for every millivolt change on the
base, the collector should change about 120 millivolts.
Doesn't much matter what the hFE is, other than it effects
the input impedance.
-Bill
The transistor base voltage varies very little over the range"Kevin Aylward" <salesEXTRACT@anasoft.co.uk> wrote in message
news:5cX%c.157$F73.138@fe2.news.blueyonder.co.uk...
Ingvar Esk wrote:
Depends how to interpret your questions. Litterally or trying to
understand what you "really mean".
"zalzon" <zalzonishappy@zalll.com> wrote in message
news:5rrqj0lj4q5nvf9k269oh1pv1kmk7m0r2o@4ax.com...
Without long explainations, is it fair to say :
1) A transistor uses change in voltage to control a large flow of
current.
No.
No. You are wrong. The orginal claim was *100%* correct. Its not
debatable.
Well, as you state in your paper "Despite much literature that implies other
wise..." I think it must be debatable, otherwise I can't see that "much
literature" would imply so
A transistor amplifies current (hFE).
Indeed it does as a side effect, however the transistor is absolutely
and fundamentally a *voltage* controlled and operated device
(http://www.anasoft.co.uk/EE/bipolardesign1/bipolardesign1.html).
Applying a *voltage* to the base emitter injects carriers into the base
region. These carriers are then swept up by the collectors accelerating
voltage. The fact that a few leak away through the base is just a
nuisance. Ideally, there would be no base current at all.
From my point of view. If I feed 1mA into the base the Ic would be some
hundreds (hFE) mA (if available), even though I know that hFE is not very
accurate. On the other hand if I supplied 0.1V to the base, nothing much
will happen at the collector. I can accept that it can be seen as a Voltage
amplifier, but only around its working point (Vb ~0.6-0.7V).
Ingvar Esk
of collector current. Like you say, the base voltage relative to the
emitter will usually be 600 to 700 mV, or maybe a bit more.
A general rule of thumb to calculate voltage gain is
40 times the difference of supply voltage to collector voltage.
So, if the transistor were biased such that the collector is 3
volts and the supply is 6 volts, you get a voltage gain
around (6-3)*40 = 120. So, for every millivolt change on the
base, the collector should change about 120 millivolts.
Doesn't much matter what the hFE is, other than it effects
the input impedance.
-Bill