G
George Herold
Guest
On Thursday, August 1, 2019 at 8:26:21 PM UTC-4, Winfield Hill wrote:
for driving coils, TECs or laser diodes on the low end.
George H.
5-10 mA? what's the load? I imagine current sourcesWinfield Hill wrote...
Winfield Hill wrote...
On July 31, 2019, Winfield Hill wrote:
https://www.dropbox.com/s/nednxac2bykld8q/opamp-MOSFET_current-source.pdf?dl=1
In the formulas, I assume the opamp's output
signal is controlled by Vin-Vs and R2 C2.
still checking the math ... but one formula
... gives us Zin = Vg/i3 at the MOSFET's gate.
Zin = R1 (1 + fT / f) + 1 / s C1.
Example circuit, 50mA full scale, running at 10mA.
Q1: IXTP02N120, 1.2kV, 33W Ciss 104pF, gm n=6.2,
fixed gm error: so gm = 65mS at 10mA, fT = 99MHz.
Circuit, R1 = 250 ohms, goal 10MHz BW.
Q1 gate Zin = 250*10 + j153 ohms from Ciss(10MHz).
Latter term non-material. Given high Zin, chose
R3 = 270, isolates opamp. Opamp = LT1360, 50MHz.
Chose R2 1.5k, C2 10pF for our desired 10MHz BW.
Opamp Zout 80/5 = 16 ohms. Safe margins all-round.
The above is a small-signal model. I processed it
with SPICE, response is flat to 20MHz, with 1 dB of
peaking at 65MHz, pulse response is about 5ns, with
10% overshoot. Something may be wrong, this is way
way too good. OTOH, large-signal results, including
full OFF to ON, and back, will be far slower.
Dunno if anybody's following this aspect, but there's
a goal and path to follow. Today I was able to bench
verify a 10ns IXTP02N120 step response (5mA to 10mA),
for driving coils, TECs or laser diodes on the low end.
George H.
but only if Vds >= 35 volts. My simple model ignores
Coss = 10pF and Crss = 2pF at 35V. But at 5 volts,
Coss = 70pF and Crss = 50pF, which slows the current
switching to 20 to 30ns or longer.
Actually, my plan was to cascode the "signal" MOSFET
with a HV power part, running off the op-amp's Vcc
supply rail, so Vds may well be under 5 to 10 volts.
That needs to be a low-capacitance low-voltage part.
With the right parts we can keep the simple model.
--
Thanks,
- Win