Guest
On Monday, May 15, 2017 at 10:37:52 AM UTC-7, Tim Wescott wrote:
This is an interesting article. It does mention pulling the base to -1V. Is this the article you were referring to?
https://www.diodes.com/assets/App-Note-Files/zetex/an14.pdf
Also noteworthy:
"This isn't to exclude MOSFET based designs (some IC vendors have specified MOS as this suits their technology) but in terms of equivalent on-resistance and silicon efficiency, the low voltage bipolar device has no equal. For example, the ZETEX ZTX849 E-Line (TO-92 compatible) transistor exhibits a RCE(sat) of 36mâŚ. This can only be matched by a much larger (and expensive) MOSFET die, only
available in TO-220, D-Pak, and similar larger packages."
Michael
On Mon, 15 May 2017 08:33:58 -0700, mrdarrett wrote:
Hello,
I've discovered logic-level mosfets, and am using an Arduino to drive a
small 12VDC (about an amp or so) pump motor with PWM, using an IRLZ34N
as the power mosfet.
Would a mosfet-driver be recommended to switch that mosfet on and off
more quickly? Or is a logic-level mosfet already designed to
efficiently turn on and off with the weak logic level signal?
Given that you are also asking about BJT vs. FET, note that in order to
switch at it's fastest, a BJT needs a base driver that can push charge in
quickly and actively pull it out quickly. The difference in recovery
from saturation when you pull the base below ground vs. when you just
pull it _to_ ground can be dramatic.
And don't use a grotty old TIP31 if you want speed -- Zetex developed
some pretty impressive modern BJTs before they got bought by Diodes,
Inc., and turned into a cash cow. Those transistors are still sold, and
have some pretty impressive HFE_sat and VCE_sat numbers.
--
Tim Wescott
Wescott Design Services
http://www.wescottdesign.com
I'm looking for work -- see my website!
This is an interesting article. It does mention pulling the base to -1V. Is this the article you were referring to?
https://www.diodes.com/assets/App-Note-Files/zetex/an14.pdf
Also noteworthy:
"This isn't to exclude MOSFET based designs (some IC vendors have specified MOS as this suits their technology) but in terms of equivalent on-resistance and silicon efficiency, the low voltage bipolar device has no equal. For example, the ZETEX ZTX849 E-Line (TO-92 compatible) transistor exhibits a RCE(sat) of 36mâŚ. This can only be matched by a much larger (and expensive) MOSFET die, only
available in TO-220, D-Pak, and similar larger packages."
Michael