IIC model MRF6P3300HR3 datasheet

MRF6P3300HR3 datasheet free download
http://www.chinaicmart.com/series-MRF/MRF6P3300HR3.html

RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband
performance
of this device make it ideal for large - signal, common - source
amplifier
applications in 32 volt analog or digital television transmitter
equipment.
• Typical Narrowband Two-Tone Performance @ 860 MHz: VDD = 32 Volts,
IDQ = 1600 mA, Pout = 270 Watts PEP
Power Gain — 20.2 dB
Drain Efficiency — 44.1%
IMD — -30.8 dBc
• Typical Narrowband DVBT OFDM Performance @ 860 MHz: VDD 32 Volts, IDQ = 1600 mA, Pout = 60 Watts Avg., 8K Mode, 64 QAM
Power Gain — 20.4 dB
Drain Efficiency — 29%
ACPR @ 3.9 MHz Offset — -57 dBc @ 20 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW
Output Power
• Characterized with Series Equivalent Large-Signal Impedance
Parameters
• Internally Matched for Ease of Use
• Designed for Push-Pull Operation Only
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• Pb-Free and RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel..
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.