High gain amplifier?

"Kevin Aylward" <kevindotaylwardEXTRACT@anasoft.co.uk> wrote in message
news:nxm7c.1283$cw6.796@newsfep3-gui.server.ntli.net...
Winfield Hill wrote:
powersupplies wrote...

If you want a practical way to design a transistor circuit
you need to use the h-parameters equivalent circuit.

No, the hybrid model was abandoned in the early 60s, just
about the time I started serious designing. I spent about
three months religiously using h-parameters, searching out
transistors with h-parameter curves, etc., and failing to
get accurate results. Then Carver Mead, who was a friend
of my boss, came by for a visit and I got a defining-moment
15-minute lecture on Ebers-Moll and its variants. Looking
in various textbooks, I realized that a few described this
method, which a small part of the community had been using
for years. Anyway, many difficult design issues suddenly
became easy, and my circuit results started matching my
calculations. Over the last 40 years, the awful h-parameter
approach has thankfully been relegated to the dustbin by the
engineering community, so that rarely do we see anyone now
espousing its use, let alone arguing it's the only true way.

Also, do you know what is hfe? hfe is *defined* as a current
controlled current source.

No its not. Look, dude. You aint goanna win on this. Your
statement here is completely nonsensical. hfe is simple
the ratio of collector current to base current. There is
nothing implied about the base current controlling the
collector current.

YES, it does imply that - you are wrong.

No, the collector current "controls" the base current is much
more accurate statement, albeit with limited usefulness.

I like to use the phrase "the collector current is a *function* of the
base current". This doesn't imply any direct control, just a
correlation. We all know, that the fact that there is a relation between
lung cancer and smoking does not, by itself, mean that such a relation
is causal, i.e controlling. It takes more evidence to show a causal
relation. In the case of the transistor, Vbe causes both the base
current and collector current, hence the base current and collector
current will be correlated, but not due to each other.

Does having a pet reduce your stress, or is the nature of people that
have pets less likely to have stress?


B.t.w. did you manage to find the gain for the original circuit,
I am still struggling with it.

Kevin accurately told you what it'd be, using Va (the Early
voltage for the LM395 "transistor") and the transconductance
of the LM317 current source, but neither of these parameters
is available from the manufacturer, nor their manufacturing
spreads. But they are very easy to measure for a given part.


The key thing about a transistor, is that it is, essentially, a diode!

One puts a voltage across a diode, and this accelerating potential,
tries to accelerate carriers, ie create a current in it. This is pretty
basic physics. Its voltage that makes things do things. The base of the
transistor is simply a way of impressing a voltage across this basic
diode, without such (controlling) voltage actually taking much current,
so that the bulk of the current is supplied by the collector circuit.
All that matters is that the voltage gets there. The diode junction
current then must follow the diode equation, irespective of any current
that leaks out of the base.

This very common misnomer about about transisters being erroneosly
described as base current controlled really needs addressing in a full
page in a good book, so I'll leave that one to you Win for your next
edition:).
I now realise, thanks to Winfield's post that there are two ways to
approach the transistor. I think what you and Winfield are
saying is that a transistor is a voltage controlled current
source because you are using the hybrid pi equivalent circuit,
whereas I am using the h-parameters equivalent circuit which
defines the transistor as a current controlled current source.
It seems that some books use hybrid pi, others use h parameters,
which is confusing. Apart from that, hfe is h21 of the h parameters
and implies a current controlled current source. Whether it is a good
way to describe a transistor, you may say - no, but hfe is a current
controlled current source.
 
In article <c3l140$344$1@news.gngidc.net>,
"powersupplies" <steve@wwwusenet.com> writes:
"Kevin Aylward" <kevindotaylwardEXTRACT@anasoft.co.uk> wrote in message
news:nxm7c.1283$cw6.796@newsfep3-gui.server.ntli.net...
Winfield Hill wrote:
powersupplies wrote...

If you want a practical way to design a transistor circuit
you need to use the h-parameters equivalent circuit.

No, the hybrid model was abandoned in the early 60s, just
about the time I started serious designing. I spent about
three months religiously using h-parameters, searching out
transistors with h-parameter curves, etc., and failing to
get accurate results. Then Carver Mead, who was a friend
of my boss, came by for a visit and I got a defining-moment
15-minute lecture on Ebers-Moll and its variants. Looking
in various textbooks, I realized that a few described this
method, which a small part of the community had been using
for years. Anyway, many difficult design issues suddenly
became easy, and my circuit results started matching my
calculations. Over the last 40 years, the awful h-parameter
approach has thankfully been relegated to the dustbin by the
engineering community, so that rarely do we see anyone now
espousing its use, let alone arguing it's the only true way.

Also, do you know what is hfe? hfe is *defined* as a current
controlled current source.

No its not. Look, dude. You aint goanna win on this. Your
statement here is completely nonsensical. hfe is simple
the ratio of collector current to base current. There is
nothing implied about the base current controlling the
collector current.

YES, it does imply that - you are wrong.

No, the collector current "controls" the base current is much
more accurate statement, albeit with limited usefulness.

I like to use the phrase "the collector current is a *function* of the
base current". This doesn't imply any direct control, just a
correlation. We all know, that the fact that there is a relation between
lung cancer and smoking does not, by itself, mean that such a relation
is causal, i.e controlling. It takes more evidence to show a causal
relation. In the case of the transistor, Vbe causes both the base
current and collector current, hence the base current and collector
current will be correlated, but not due to each other.

Does having a pet reduce your stress, or is the nature of people that
have pets less likely to have stress?


B.t.w. did you manage to find the gain for the original circuit,
I am still struggling with it.

Kevin accurately told you what it'd be, using Va (the Early
voltage for the LM395 "transistor") and the transconductance
of the LM317 current source, but neither of these parameters
is available from the manufacturer, nor their manufacturing
spreads. But they are very easy to measure for a given part.


The key thing about a transistor, is that it is, essentially, a diode!

One puts a voltage across a diode, and this accelerating potential,
tries to accelerate carriers, ie create a current in it. This is pretty
basic physics. Its voltage that makes things do things. The base of the
transistor is simply a way of impressing a voltage across this basic
diode, without such (controlling) voltage actually taking much current,
so that the bulk of the current is supplied by the collector circuit.
All that matters is that the voltage gets there. The diode junction
current then must follow the diode equation, irespective of any current
that leaks out of the base.

This very common misnomer about about transisters being erroneosly
described as base current controlled really needs addressing in a full
page in a good book, so I'll leave that one to you Win for your next
edition:).

I now realise, thanks to Winfield's post that there are two ways to
approach the transistor. I think what you and Winfield are
saying is that a transistor is a voltage controlled current
source because you are using the hybrid pi equivalent circuit,

Nope -- the physics of the transistor make the Ic=f(Vbe) the
actual behavior that best models the transistor. Arguments
about how difficult it might be to 'force' a certain Vbe are
rather specious, because that kind of fact (forcing current
or forcing voltage) is always operative.

whereas I am using the h-parameters equivalent circuit which
defines the transistor as a current controlled current source.

It is a travesty that manufacturers still sometimes
supply H-parameter curves. In a practical sense, they aren't
very useful.

It seems that some books use hybrid pi, others use h parameters,
which is confusing.

You really don't want to use EITHER hybrid pi or h parameters as
authoritative in the general case. In some linearized cases,
hybrid pi can certainly be useful. H-parameters aren't really
very useful (except when the manufacturer can guarantee them :).)

John
 
powersupplies wrote:
What part of Ie = Is.exp(Vbeq/KT) do you still fail to understand?


Not a chance mate. Its obvious that you are a *complete* novice.
Don't get me wrong, we all have to learn sometime, but what you need
to know is just how limited you understanding of the most basic
circuits is. Tell me, where did you get *your* bachelors degree in
Electronic Engineering?

You need to go and get some text books on *physics*. All you
knowledge apears to be from bantam paperbacks, like "Electric
Circuits For Dummies". And I mean this seriously, not as a personal
insult. You have simply been reading books of limited technical
quality.


B.t.w. did you manage to find the gain for the original circuit, I
am still struggling with it.

And you claim that I am wrong. Jesus wept, dude.

The gain of your circuit can not be calculated without more
information. You need to know the dynamic impedance of the regulator
connected as a current source.

I now realise, thanks to Winfield's post that there are two ways to
approach the transistor.
Maybe, but not in the way you imagine. For example, there is the "charge
controlled" physics model. In this *physics* model, instead of
calculating equations based on Vbe controlling emitter current, its Vbe
controlling charge.

I think what you and Winfield are
saying is that a transistor is a voltage controlled current
source because you are using the hybrid pi equivalent circuit,
NO!NO!NO!

The transister is a voltage controlled device because, read my lips,
that is how the *physics* says it operates. The diode current is
calulated by solving the diffusion equation.

What part of "its voltage that makes charges move" are you still having
problems with?

whereas I am using the h-parameters equivalent circuit which
defines the transistor as a current controlled current source.
It seems that some books use hybrid pi, others use h parameters,
which is confusing.
This is completely irrelevant to the *physics* of the transistor. A
small signal model is just a *simplified* model for ac conditions. It
uses functional relations between variables. It makes no assumptions
about what variable causes any actions.

Apart from that, hfe is h21 of the h parameters
and implies a current controlled current source. Whether it is a good
way to describe a transistor, you may say - no, but hfe is a current
controlled current source.
As I explained, this statement is complete nonsensical. It is
meaningless. A "hfe" isn't anything. It is not a physical object, so it
cant be a source. It is a number used to describe the ratio of collector
current to base current.


Kevin Aylward
salesEXTRACT@anasoft.co.uk
http://www.anasoft.co.uk
SuperSpice, a very affordable Mixed-Mode
Windows Simulator with Schematic Capture,
Waveform Display, FFT's and Filter Design.

"quotes with no meaning, are meaningless" - Kevin Aylward.
 
powersupplies wrote...
I was thought that Ice=f(Ib,Vce). If you have a relation
Ic=hfe*Ib you have a current controlled current source,
can't you see that?
It'll be hardly worthy of the name, because the input-output
ratio will be poorly determined, will change from part-to-
part, with output voltage, with time, and with temperature.

If not, how do you define a current controlled current
source?
Easy, first run the input current through a diode-connected
transistor, to create a voltage predicted by Ebers-Moll, then
present that voltage to a second identical transistor to set
its output current. This is called a current mirror; look it
up. To improve the voltage compliance you can add a third
transistor in the Wilson current-mirror configuration. And
to improve the current mirror's accuracy with imperfectly-
matched transistors, add two emitter resistors. You can read
all about this basic but important subject in Aoe pages 88-91.

Thanks,
- Win

whill_at_picovolt-dot-com
 
"Winfield Hill" <Winfield_member@newsguy.com> wrote in message
news:c3ne3o028b5@drn.newsguy.com...
powersupplies wrote...

I was thought that Ice=f(Ib,Vce). If you have a relation
Ic=hfe*Ib you have a current controlled current source,
can't you see that?

It'll be hardly worthy of the name, because the input-output
ratio will be poorly determined, will change from part-to-
part, with output voltage, with time, and with temperature.
This was right out of my lecture notes and I can show you
a list of books where this is written.

If not, how do you define a current controlled current
source?

Easy, first run the input current through a diode-connected
transistor, to create a voltage predicted by Ebers-Moll, then
present that voltage to a second identical transistor to set
its output current. This is called a current mirror; look it
up. To improve the voltage compliance you can add a third
transistor in the Wilson current-mirror configuration. And
to improve the current mirror's accuracy with imperfectly-
matched transistors, add two emitter resistors. You can read
all about this basic but important subject in Aoe pages 88-91.
What's Aoe?
What is your definition of an ideal current controlled current source
Basically, if you have Ic=hfe*Ib then Ic is a current controlled
current source, it has nothing to do with transistors or physics,
it is two port network theory.
 
powersupplies wrote:

What's Aoe?
What is your definition of an ideal current controlled current source
Basically, if you have Ic=hfe*Ib then Ic is a current controlled
current source, it has nothing to do with transistors or physics,
it is two port network theory.
I think their point is that this particular two port formula has only
a barely useful resemblance to the actual operation of real
transistors. It is used because it is linear, and therefore
mathematically simple, not because it is accurate.

--
John Popelish
 
powersupplies wrote...
What's Aoe?
http://www.artofelectronics.com

What is your definition of an ideal current controlled current
source? Basically, if you have Ic=hfe*Ib then Ic is a current
controlled current source, it has nothing to do with transistors
or physics, it is two port network theory.
This theory assumes hfe is a constant, which is totally wrong.
Advanced versions may assume hfe is predictable, which is also
totally wrong. It may be simple, but it's nearly useless.

Thanks,
- Win

whill_at_picovolt-dot-com
 
powersupplies wrote:
"Winfield Hill" <Winfield_member@newsguy.com> wrote in message
news:c3ne3o028b5@drn.newsguy.com...
powersupplies wrote...

I was thought that Ice=f(Ib,Vce). If you have a relation
Ic=hfe*Ib you have a current controlled current source,
can't you see that?
You still miss the point. Sure, you can make an *approximate* model,
where you make a *definition* that the collector current is "caused" by
a base current. However, this has nothing to do with what physically
happens. You can't define the physics. The physics does what it does,
and as such, the collecter current is the result of the voltage applied
across the emitter junction, as is the base current.

I have already explained that a functional relation is not necessarily a
casual one.

It'll be hardly worthy of the name, because the input-output
ratio will be poorly determined, will change from part-to-
part, with output voltage, with time, and with temperature.


This was right out of my lecture notes and I can show you
a list of books where this is written.
You misunderstand what is being written, or your notes are wrong.

If not, how do you define a current controlled current
source?

Easy, first run the input current through a diode-connected
transistor, to create a voltage predicted by Ebers-Moll, then
present that voltage to a second identical transistor to set
its output current. This is called a current mirror; look it
up. To improve the voltage compliance you can add a third
transistor in the Wilson current-mirror configuration. And
to improve the current mirror's accuracy with imperfectly-
matched transistors, add two emitter resistors. You can read
all about this basic but important subject in Aoe pages 88-91.

What's Aoe?
What is your definition of an ideal current controlled current source
Basically, if you have Ic=hfe*Ib then Ic is a current controlled
current source, it has nothing to do with transistors or physics,
it is two port network theory.
Exactly. What part of "nothing to do with transistors or physics" do you
not understand?

The transistor is a voltage controlled device, the fact that one might
make an *approximation* to such behaviour does not change its physical
operation.

You need to understand that applying a voltage to the base emitter
junction is what determines the emitter current. Any base current that
leaks into the base is purely incidental. It plays no part in basic
transistor action.

Kevin Aylward
salesEXTRACT@anasoft.co.uk
http://www.anasoft.co.uk
SuperSpice, a very affordable Mixed-Mode
Windows Simulator with Schematic Capture,
Waveform Display, FFT's and Filter Design.

"quotes with no meaning, are meaningless" - Kevin Aylward.
 

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