N
Nobody
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On Mon, 26 Sep 2011 23:54:11 -0700, fungus wrote:
large MOSFETs with significant gate capacitance, and you're switching at
hundreds of kHz.
When using a MOSFET as a switch, the power dissipation is low when it's
fully off (low current) or fully on (low voltage drop), but high when it's
in between (both current and voltage drop are significant). Consequently,
when switching large currents, you want to spend as little time in the
linear region as possible, which means charging and discharging the gate
capacitance as quickly as possible.
So while an idealised MOSFET has infinite gate resistance (and a practical
MOSFET isn't far from that), the combination of significant capacitance
and fast switching times mean that power-MOSFET drivers are designed to
source/sink pulses of several amps to/from the gate.
However, this isn't something you necessarily need to worry about for
driving an LED. Even if you're using PWM to vary the brightness, the
switching frequency doesn't need to be more than a few hundred Hz. And a
MOSFET designed for less than 1A will have much lower gate capacitance
than one rated at 50A or more. Finally, efficiency is less of a
consideration; if a 1kW PSU is "only" 95% efficient, that's still 50W of
heat which needs to be removed.
The main consideration for using an FET with a microcontroller is that you
want one which will saturate (turn fully on) at a sufficiently low gate
voltage. These are normally termed "logic level" FETs, meaning that the
output from a (nominally) 5V device will be sufficient to drive the gate
directly. The data sheet for a device will normally have a graph of
channel resistance (Rds(on)) against gate voltage (Vds).
Yes. This is an issue for e.g. switched-mode PSUs, where you may haveYes. I've been reading up some more and the thing people
seem to worry about with MOSFETS is gate capacitance
(the gate acts like a capacitor).
Seems that to get it to switch quickly you have to fill/drain
the gate as fast as possible.
large MOSFETs with significant gate capacitance, and you're switching at
hundreds of kHz.
When using a MOSFET as a switch, the power dissipation is low when it's
fully off (low current) or fully on (low voltage drop), but high when it's
in between (both current and voltage drop are significant). Consequently,
when switching large currents, you want to spend as little time in the
linear region as possible, which means charging and discharging the gate
capacitance as quickly as possible.
So while an idealised MOSFET has infinite gate resistance (and a practical
MOSFET isn't far from that), the combination of significant capacitance
and fast switching times mean that power-MOSFET drivers are designed to
source/sink pulses of several amps to/from the gate.
However, this isn't something you necessarily need to worry about for
driving an LED. Even if you're using PWM to vary the brightness, the
switching frequency doesn't need to be more than a few hundred Hz. And a
MOSFET designed for less than 1A will have much lower gate capacitance
than one rated at 50A or more. Finally, efficiency is less of a
consideration; if a 1kW PSU is "only" 95% efficient, that's still 50W of
heat which needs to be removed.
The main consideration for using an FET with a microcontroller is that you
want one which will saturate (turn fully on) at a sufficiently low gate
voltage. These are normally termed "logic level" FETs, meaning that the
output from a (nominally) 5V device will be sufficient to drive the gate
directly. The data sheet for a device will normally have a graph of
channel resistance (Rds(on)) against gate voltage (Vds).