L
legg
Guest
On Wed, 09 Sep 2020 11:08:49 -0700, John Larkin
<snip>
Because.
I should have said ANY bipolar transistor, used in
a power circuit. Leakage current is process controlled
and pretty stable; that is to say - it is generally
untested.
Iceo is usually worse than Icbo, because it is generated
by concurrent Icbo/beta effects. The emitter-base resistor
avoids the effect on Icbo, by permitting a path for Icb
that is not amplified - as I understand it.
As with all silicon device leakage, it gets worse non-
linearly, with temperature. In doing so - it adds to
self heating which will aggravate a supposedly static
condition. Local hot-spots on a wafer can develop.
Most nondestructive Ice/Vce plots will show this effect
as a \'negative resistance\' slope at lower currents.
This reduces between the stimulated conditions as
Icbo becomes Icbx - from no bias to reverse bias -
as will occur if some unaccounted for current is
forced through an emitter-base resistor that is missing
or inappropriately large.
If this were a thyristor structure . . .
Under transient conditions, the emitter-base resistor
also aids in reducing miller charge effects, through
the same mechanism, though saturation effects would
dominate in a non-linear switching circuit.
As the OP is anticipating a battery protection circuit,
leakage current may only be a concern if connections
remain, on the shelf.
In a simple circuits like the OP\'s, where the TL431
can\'t be guaranteed \'off\' above 1Vak, a path for it\'s
stray current, to bypass the bipolar\'s base terminal, is
only prudent.
RL
<snip>
Actually, with the PNP, it doesn\'t need a b-e resistor. Once, about 60
years ago, people used leaky germanium transistors, so using b-e
resistors became folklore.
It\'s still advisable for any npn running over it\'s Vce
range at the temperature limit.
Why?
Because.
I should have said ANY bipolar transistor, used in
a power circuit. Leakage current is process controlled
and pretty stable; that is to say - it is generally
untested.
Iceo is usually worse than Icbo, because it is generated
by concurrent Icbo/beta effects. The emitter-base resistor
avoids the effect on Icbo, by permitting a path for Icb
that is not amplified - as I understand it.
As with all silicon device leakage, it gets worse non-
linearly, with temperature. In doing so - it adds to
self heating which will aggravate a supposedly static
condition. Local hot-spots on a wafer can develop.
Most nondestructive Ice/Vce plots will show this effect
as a \'negative resistance\' slope at lower currents.
This reduces between the stimulated conditions as
Icbo becomes Icbx - from no bias to reverse bias -
as will occur if some unaccounted for current is
forced through an emitter-base resistor that is missing
or inappropriately large.
If this were a thyristor structure . . .
Under transient conditions, the emitter-base resistor
also aids in reducing miller charge effects, through
the same mechanism, though saturation effects would
dominate in a non-linear switching circuit.
As the OP is anticipating a battery protection circuit,
leakage current may only be a concern if connections
remain, on the shelf.
In a simple circuits like the OP\'s, where the TL431
can\'t be guaranteed \'off\' above 1Vak, a path for it\'s
stray current, to bypass the bipolar\'s base terminal, is
only prudent.
RL