What is the Feature Size In Fab Process???

J

JLD

Guest
Hello all.
I have a question about the fab process of ICs but really about some
of the terminology.
When I read an article in a EE trade journal and it says a 90nm
process what does that exactly mean? I know about Moore's law and how
chips are getting smaller and smaller (more and more
transistors/chip), 1.8um > 1.3um > ... > 90nm > 65nm > ...
I have heard about the size of the node and the feature size.

1) Is the feature size the physical size of a single FET? Or is the
feature size the physical size of a feature of the FET i.e. channel
length, G/D/S conductor size, etc.?
2) Is the node size the physical size of a chip die or the size of the
smallest component on the die?

I would like to understand what an engineer means when he/she says
130um, 90nm, etc. process.

tia
JLD
 
On 28 Sep 2004 11:34:30 -0700, j2israel@hotmail.com (JLD) wrote:

Hello all.
I have a question about the fab process of ICs but really about some
of the terminology.
When I read an article in a EE trade journal and it says a 90nm
process what does that exactly mean? I know about Moore's law and how
chips are getting smaller and smaller (more and more
transistors/chip), 1.8um > 1.3um > ... > 90nm > 65nm > ...
I have heard about the size of the node and the feature size.

1) Is the feature size the physical size of a single FET? Or is the
feature size the physical size of a feature of the FET i.e. channel
length, G/D/S conductor size, etc.?
2) Is the node size the physical size of a chip die or the size of the
smallest component on the die?

I would like to understand what an engineer means when he/she says
130um, 90nm, etc. process.

tia
JLD
I would suggest that um is micro-metres and nm is nano-metres.

Track widths and light wavelengths for exposure of the films are measured in
these units.

Peter

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Email Address:
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Peter A Forbes <diesel@easynet.co.uk> wrote in message news:<2jokl0phfs7gjevnm0a79h0ttut4mq08d7@4ax.com>...
On 28 Sep 2004 11:34:30 -0700, j2israel@hotmail.com (JLD) wrote:

Hello all.
I have a question about the fab process of ICs but really about some
of the terminology.
When I read an article in a EE trade journal and it says a 90nm
process what does that exactly mean? I know about Moore's law and how
chips are getting smaller and smaller (more and more
transistors/chip), 1.8um > 1.3um > ... > 90nm > 65nm > ...
I have heard about the size of the node and the feature size.

1) Is the feature size the physical size of a single FET? Or is the
feature size the physical size of a feature of the FET i.e. channel
length, G/D/S conductor size, etc.?
2) Is the node size the physical size of a chip die or the size of the
smallest component on the die?

I would like to understand what an engineer means when he/she says
130um, 90nm, etc. process.

tia
JLD

I would suggest that um is micro-metres and nm is nano-metres.

Track widths and light wavelengths for exposure of the films are measured in
these units.

Peter
Peter:

What do you mean by "Track widths and light wavelengths for exposure
of the films are measured inthese units."?
I assume that this is the lithography process, but what are tracks and
exposure? Does that mean the smallest mask that can be made to be put
over the silicon in order to make a component, device, trace, etc.
from the lithography process?

tia
JLD
 

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