W
Walter Harley
Guest
I'm looking at the datasheet of a Supertex VN0106 MOSFET. It lists
"gate-body leakage (Igss)" of 100nA, at Vgs=+/-20v, Vds = 0v. This is a
mid-power N-channel enhancement MOSFET, in a TO92 case with source
internally connected to substrate.
What is gate-body leakage? Surely it can't be talking about leakage current
from the gate to source, on the order of 100nA?? That would equate to a
gate resistance of 20v/100nA = 200MEG or less, which while high is much less
than the trillions of ohms I thought MOSFET gates presented.
But if not that, then what?
Thanks,
-walter
"gate-body leakage (Igss)" of 100nA, at Vgs=+/-20v, Vds = 0v. This is a
mid-power N-channel enhancement MOSFET, in a TO92 case with source
internally connected to substrate.
What is gate-body leakage? Surely it can't be talking about leakage current
from the gate to source, on the order of 100nA?? That would equate to a
gate resistance of 20v/100nA = 200MEG or less, which while high is much less
than the trillions of ohms I thought MOSFET gates presented.
But if not that, then what?
Thanks,
-walter