VDmosfet parameter extraction tool for LTspice

  • Thread starter Hendrik Jan Zwerver
  • Start date
H

Hendrik Jan Zwerver

Guest
Hello,

Anyone who is interrested to make there own power mosfet model for
spice can now easily do this with a tool i made.
It's a windows application and can be found on the yahoo groups
LTspice.
The programs needs dot net framework 2.0 to be installed on your
computer in order let it run.

Features:
1 Datasheet information of the mosfet to be modeled is entered in the
program.
2 This data can be saved for later use.
3 The model created is a .model statement which only will work in
LTspice because it makes use of the VDmos device in LTspice not
pressent in any other spice.
4 The program has a library manager to keep all your models in one .lib
file.

The model generated by the program matches the datasheet ouput graph,
transfer graph and all the capacitances of the device. Especialy the
nonlinear gate drain capacitor which is the power of VDmos model in
LTspice.
It now allso includes the reverse recovery of the body diode. (only
basicly because the spice diode only covers the storage time)

Best regards,

Hendrik Jan Zwerver
 
On 14 Jan 2007 14:23:08 -0800, "Hendrik Jan Zwerver"
<hjzwerver@gmail.com> wrote:

Hello,

Anyone who is interrested to make there own power mosfet model for
spice can now easily do this with a tool i made.
It's a windows application and can be found on the yahoo groups
LTspice.
The programs needs dot net framework 2.0 to be installed on your
computer in order let it run.

Features:
1 Datasheet information of the mosfet to be modeled is entered in the
program.
2 This data can be saved for later use.
3 The model created is a .model statement which only will work in
LTspice because it makes use of the VDmos device in LTspice not
pressent in any other spice.
4 The program has a library manager to keep all your models in one .lib
file.

The model generated by the program matches the datasheet ouput graph,
transfer graph and all the capacitances of the device. Especialy the
nonlinear gate drain capacitor which is the power of VDmos model in
LTspice.
It now allso includes the reverse recovery of the body diode. (only
basicly because the spice diode only covers the storage time)

Best regards,

Hendrik Jan Zwerver
Click to expand...
(1) Does it model sub-threshold behavior accurately?

(2) What is "dot net framework 2.0"?

...Jim Thompson
--
| James E.Thompson, P.E. | mens |
| Analog Innovations, Inc. | et |
| Analog/Mixed-Signal ASIC's and Discrete Systems | manus |
| Phoenix, Arizona Voice:(480)460-2350 | |
| E-mail Address at Website Fax:(480)460-2142 | Brass Rat |
| http://www.analog-innovations.com | 1962 |

I love to cook with wine. Sometimes I even put it in the food.
 
Jim Thompson wrote:
On 14 Jan 2007 14:23:08 -0800, "Hendrik Jan Zwerver"
hjzwerver@gmail.com> wrote:

Hello,

Anyone who is interrested to make there own power mosfet model for
spice can now easily do this with a tool i made.
It's a windows application and can be found on the yahoo groups
LTspice.
The programs needs dot net framework 2.0 to be installed on your
computer in order let it run.

Features:
1 Datasheet information of the mosfet to be modeled is entered in the
program.
2 This data can be saved for later use.
3 The model created is a .model statement which only will work in
LTspice because it makes use of the VDmos device in LTspice not
pressent in any other spice.
4 The program has a library manager to keep all your models in one .lib
file.

The model generated by the program matches the datasheet ouput graph,
transfer graph and all the capacitances of the device. Especialy the
nonlinear gate drain capacitor which is the power of VDmos model in
LTspice.
It now allso includes the reverse recovery of the body diode. (only
basicly because the spice diode only covers the storage time)

Best regards,

Hendrik Jan Zwerver

(1) Does it model sub-threshold behavior accurately?

(2) What is "dot net framework 2.0"?

The thresshold voltage is a parameter you supply and i allways use the
Click to expand...
datasheet nominal value.
The sub part of your question i think you mean that the real thresshold
when drain current is flowwing is some what higher because of the
source resistance . then the answer is yes. You can see this in the
gate charge plot as a gate plateau voltage.

The dot net frame work from microsoft is intended to replace the COM+
stuff.
you can download it here:
http://www.microsoft.com/downloads/details.aspx?FamilyID=0856eacb-4362-4b0d-8edd-aab15c5e04f5&DisplayLang=en
Or do a google : dot net framework 2.0 redist

Regards,

Hendrik Jan
 
"Jim Thompson" <To-Email-Use-The-Envelope-Icon@My-Web-Site.com> schrieb im
Newsbeitrag news:8dclq2ph5e4a3o05boes7sm5geg5uu8sm7@4ax.com...
On 14 Jan 2007 14:23:08 -0800, "Hendrik Jan Zwerver"
hjzwerver@gmail.com> wrote:

Hello,

Anyone who is interrested to make there own power mosfet model for
spice can now easily do this with a tool i made.
It's a windows application and can be found on the yahoo groups
LTspice.
The programs needs dot net framework 2.0 to be installed on your
computer in order let it run.

Features:
1 Datasheet information of the mosfet to be modeled is entered in the
program.
2 This data can be saved for later use.
3 The model created is a .model statement which only will work in
LTspice because it makes use of the VDmos device in LTspice not
pressent in any other spice.
4 The program has a library manager to keep all your models in one .lib
file.

The model generated by the program matches the datasheet ouput graph,
transfer graph and all the capacitances of the device. Especialy the
nonlinear gate drain capacitor which is the power of VDmos model in
LTspice.
It now allso includes the reverse recovery of the body diode. (only
basicly because the spice diode only covers the storage time)

Best regards,

Hendrik Jan Zwerver

(1) Does it model sub-threshold behavior accurately?
Click to expand...
Hello Jim,

This VDMOS model in LTspice is based on the Level=1 MOSFET model.
It's enhanced with the Cgd behaviour and the body diode of Vertical-MOSFETs.
So there is no improvement in the DC-behaviour. It's all about the
switching.
VDMOS transistors have to be modeled with subcircuits for other SPICE
programs. This intrinsic VDMOS model gives LTspice a big advantage in
simulation speed if switch mode power supplies are simulated with LTspice.

(2) What is "dot net framework 2.0"?
...Jim Thompson
Click to expand...
It's something like the VBASIC -DLLs you need in the past for VBASIC,
but now it's much more. Maybe it's a few ten Megabytes after installation.
..

Best regards,
Helmut
 
Hendrik Jan Zwerver wrote:
Hello,

Anyone who is interrested to make there own power mosfet model for
spice can now easily do this with a tool i made.
It's a windows application and can be found on the yahoo groups
LTspice.
The programs needs dot net framework 2.0 to be installed on your
computer in order let it run.

Features:
1 Datasheet information of the mosfet to be modeled is entered in the
program.
2 This data can be saved for later use.
3 The model created is a .model statement which only will work in
LTspice because it makes use of the VDmos device in LTspice not
pressent in any other spice.
4 The program has a library manager to keep all your models in one .lib
file.

The model generated by the program matches the datasheet ouput graph,
transfer graph and all the capacitances of the device. Especialy the
nonlinear gate drain capacitor which is the power of VDmos model in
LTspice.
It now allso includes the reverse recovery of the body diode. (only
basicly because the spice diode only covers the storage time)

Best regards,

Hendrik Jan Zwerver
Click to expand...

How does it compare to intusoft's SpiceMod?
http://www.intusoft.com/spicemod.htm
 
On Sunday, January 14, 2007 3:23:08 PM UTC-7, Hendrik Jan Zwerver wrote:
Hello,

Anyone who is interrested to make there own power mosfet model for
spice can now easily do this with a tool i made.
It's a windows application and can be found on the yahoo groups
LTspice.
The programs needs dot net framework 2.0 to be installed on your
computer in order let it run.

Features:
1 Datasheet information of the mosfet to be modeled is entered in the
program.
2 This data can be saved for later use.
3 The model created is a .model statement which only will work in
LTspice because it makes use of the VDmos device in LTspice not
pressent in any other spice.
4 The program has a library manager to keep all your models in one .lib
file.

The model generated by the program matches the datasheet ouput graph,
transfer graph and all the capacitances of the device. Especialy the
nonlinear gate drain capacitor which is the power of VDmos model in
LTspice.
It now allso includes the reverse recovery of the body diode. (only
basicly because the spice diode only covers the storage time)

Best regards,

Hendrik Jan Zwerver
Click to expand...

2014-02-28 J Faulk Colorado, USA
Hello Hendrik. This is a great tool, I plan to use it a lot.
Thanks jim
 
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