P
Paul Burridge
Guest
Hi,
I need to check the efficacy of a new FET biasing scheme to see how
tolerant it is to the wide parameter variations one gets with
real-world FETs. Hence, the usual spice model for a FET with its
invariable Vgs(off) and Idss isn't going to be of any use. If I change
the parameter "Vto" (which I believe is the same as Vgs(off) in the
real world from between say -2 to-6 volts, will that alone suffice to
emulate real world manufacturing variations? I mean, will tweaking Vto
alone also change the Idss to the appropriately meaningful value for a
FET's characteristic quadratic transconductance curve?
THanks,
p.
--
"What is now proved was once only imagin'd." - William Blake, 1793.
I need to check the efficacy of a new FET biasing scheme to see how
tolerant it is to the wide parameter variations one gets with
real-world FETs. Hence, the usual spice model for a FET with its
invariable Vgs(off) and Idss isn't going to be of any use. If I change
the parameter "Vto" (which I believe is the same as Vgs(off) in the
real world from between say -2 to-6 volts, will that alone suffice to
emulate real world manufacturing variations? I mean, will tweaking Vto
alone also change the Idss to the appropriately meaningful value for a
FET's characteristic quadratic transconductance curve?
THanks,
p.
--
"What is now proved was once only imagin'd." - William Blake, 1793.