W
Walter Harley
Guest
In an oscillator simulation I was playing with, I noticed that the simulator
claimed that voltages on a 2n3055's B-E junction were reaching -40V.
To me, that seemed improbable. I somehow assumed that that the base-emitter
junction of a bipolar transistor would have a relatively weak reverse
breakdown voltage, even for a power transistor. I don't know why I assumed
that.
But searching datasheets, I can't even find anywhere where this
characteristic is described. Anybody got some info? I don't care so much
about the 2n3055 in particular, just wondering about this characteristic of
BJT's in general.
claimed that voltages on a 2n3055's B-E junction were reaching -40V.
To me, that seemed improbable. I somehow assumed that that the base-emitter
junction of a bipolar transistor would have a relatively weak reverse
breakdown voltage, even for a power transistor. I don't know why I assumed
that.
But searching datasheets, I can't even find anywhere where this
characteristic is described. Anybody got some info? I don't care so much
about the 2n3055 in particular, just wondering about this characteristic of
BJT's in general.