Model for a BC337 transistor?

[Chaos Master]

I'm looking for a model of a BC337 transistor. I've explored everything in
Philips' site, and I didn't find it. Can someone please post a model for this
component? Thanks.
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[Leon Heller]

Chaos Master wrote:

I'm looking for a model of a BC337 transistor. I've explored everything in
Philips' site, and I didn't find it. Can someone please post a model for this
component? Thanks.

*BC337AP ZETEX Spice model Last revision 4/90 Medium Power
*ZTX Si 625mW 45V 800mA 100MHz pkg:TO-92 1,2,3
..MODEL QBC337AP NPN(IS=3.94E-14 BF=175 VAF=109.4 IKF=0.8 ISE=7.4E-15
+ NE=1.3 BR=20.5 NR=0.974 VAR=14.25 IKR=0.1 ISC=3.16E-13 NC=1.2 RB=1.1
+ RE=0.1259 RC=0.0539 CJE=6.3E-11 TF=7.5E-10 CJC=1.58E-11 VJC=0.505
+ MJC=0.39 TR=8.5E-8 )

Leon

 

[Terry Pinnell]

Chaos Master <yummy4spamtrolls@yahoo.com> wrote:

I'm looking for a model of a BC337 transistor. I've explored everything in
Philips' site, and I didn't find it. Can someone please post a model for this
component? Thanks.

Supplementing Leon's reply, in CircuitMaker there were several BC337s,
suffixed -16, -25 and -40. Here are the specs of two of those:


'BC337-16' BC337-40'
---------- --------
IS: Transport saturation current 81.2e-15 81.2e-15
BF: Ideal maximum foward beta 208.0 520.0
NF: Foward current emission coefficient 1.000 1.000
VAF: Foward Early voltage 121.0 121.0
IKF: Foward beta high current roll-off 480.0m 480.0m
ISE: B-E leakage saturation current 50.40p 20.20p
NE: B-E leakage emission coefficient 2.000 2.000
BR: Ideal maximum reverse beta 4.000 4.000
NR: Reverse current emission coefficient 1.000 1.000
VAR: Reverse Early voltage 20.00 20.00
IKR: Reverse beta high current roll-off 720.0m 720.0m
ISC: B-C leakage saturation current 0.000 0.000
NC: B-C leakage emission coefficient 2.000 2.000
RB: Zero-bias base resistance 258.0m 258.0m
IRB: Current at halfway base resistance 0.000 0.000
RBM: High current minimum base resistance 0.000 0.000
RE: Emitter resistance 64.40m 64.40m
RC: Collector resistance 25.80m 25.80m
CJE: B-E zero-bias depletion capacitance 89.50p 89.50p
VJE: B-E built-in potential 1.100 1.100
MJE: B-E junction exponential factor 500.0m 500.0m
TF: Ideal foward transit-time 757.0p 757.0p
XTF: Coefficient for bias depletion of TF 0.000 0.000
VTF: Voltage describing VBC dependence of TF 0.000 0.000
ITF: High-current parameter for effect on TF 0.000 0.000
PTF: Excess phase at freq.=1.0(TF*2PI) Hz 0.000 0.000
CJC: B-C zero-bias depletion capacitance 28.90p 28.90p
VJC: B-C built-in potential 300.0m 300.0m
MJC: B-C junction exponential factor 300.0m 300.0m
XCJC: Fraction of B-C capacitance at base node 1.000 1.000
TR: Ideal reverse transit-time 526.0n 526.0n
CJS: Zero-bias collector-saturation capacitance 0.000 0.000
VJS: Substrate junction built-in potential 750.0m 750.0m
MJS: Substrate junction exponential factor 0.000 0.000
XTB: Foward/reverse beta temp. coefficient 1.500 1.500
EG: Energy gap for temperature effect on IS 1.110 1.110
XTI: Temperature exponent for effect on IS 3.000 3.000
KF: Flicker-noise coefficient 0.000 0.000
AF: Flicker-noise exponent 1.000 1.000
FC: Foward-bias capacitance coefficient 500.0m 500.0m
TNOM: Paramameter measurement temperature 27.00 27.00

--
Terry Pinnell
Hobbyist, West Sussex, UK

 

[Chaos Master]

I found ancient runes from Leon Heller[aqzf13@dsl.pipex.com] in the floor of
sci.electronics.cad:

Chaos Master wrote:

I'm looking for a model of a BC337 transistor. I've explored everything in
Philips' site, and I didn't find it. Can someone please post a model for this
component? Thanks.

*BC337AP ZETEX Spice model Last revision 4/90 Medium Power
*ZTX Si 625mW 45V 800mA 100MHz pkg:TO-92 1,2,3
.MODEL QBC337AP NPN(IS=3.94E-14 BF=175 VAF=109.4 IKF=0.8 ISE=7.4E-15
+ NE=1.3 BR=20.5 NR=0.974 VAR=14.25 IKR=0.1 ISC=3.16E-13 NC=1.2 RB=1.1
+ RE=0.1259 RC=0.0539 CJE=6.3E-11 TF=7.5E-10 CJC=1.58E-11 VJC=0.505
+ MJC=0.39 TR=8.5E-8 )

Thanks. I've found it on Philips' site now. Their site had a typo which led me
to BC327, which gives 404 not found, and as a suggestion, BC337.

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