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Hi;
I\'ve been using N channel Jfets connected as diodes for input protection for a long time. Everything seems to just work. Recently an application came up where the low leakage of a diode connected FET would be useful but when forward biased it could pass tens to a few hundred mA. Does anyone know what characteristic of a JFET would define the max current through the Diode connected device where the Anode is the shorted Drain-Source and the Cathode is the Gate? Would it be the Jfets Id Max?
I\'ve been using N channel Jfets connected as diodes for input protection for a long time. Everything seems to just work. Recently an application came up where the low leakage of a diode connected FET would be useful but when forward biased it could pass tens to a few hundred mA. Does anyone know what characteristic of a JFET would define the max current through the Diode connected device where the Anode is the shorted Drain-Source and the Cathode is the Gate? Would it be the Jfets Id Max?