G
GreenXenon
Guest
Hi:
Is there such a thing as Capacitor-Free Dynamic Volatile Random Access
Memory?
Thanks
Is there such a thing as Capacitor-Free Dynamic Volatile Random Access
Memory?
Thanks
J
Jasen Betts
Guest
On 2009-05-23, GreenXenon <glucegen1x@gmail.com> wrote:
Delay line memory?
G
GreenXenon
Guest
On May 24, 2:05 am, Jasen Betts <ja...@xnet.co.nz> wrote:
Thanks but I was looking for CFDVRAM that is purely-electric.
According to the wiki link, the capacitor-free ones convert to a non-
electric signal and back.
The electric-delay lines still use capacitors.
http://en.wikipedia.org/wiki/Delay_line_memory
Thanks but I was looking for CFDVRAM that is purely-electric.
According to the wiki link, the capacitor-free ones convert to a non-
electric signal and back.
The electric-delay lines still use capacitors.
J
Jasen Betts
Guest
On 2009-05-24, GreenXenon <glucegen1x@gmail.com> wrote:
why?
Williams tube
why?
G
GreenXenon
Guest
On May 25, 3:53 am, Jasen Betts <ja...@xnet.co.nz> wrote:
the small devices of modern technology] purely-electric CFDVRAM chip.
The Williams tube is obsolete and uses a vacuum tube.
Sorry to be so fastidious but I am looking for a solid-state [using
the small devices of modern technology] purely-electric CFDVRAM chip.
The Williams tube is obsolete and uses a vacuum tube.
Just out of curiosity
J
Jasen Betts
Guest
On 2009-05-25, GreenXenon <glucegen1x@gmail.com> wrote:
uses capacitors (internally), or some combination of those.
every type of memory that I can think of is either non-volatile, static,
uses capacitors (internally), or some combination of those.
yeah.
G
GreenXenon
Guest
On May 26, 4:19 am, Jasen Betts <ja...@xnet.co.nz> wrote:
What about TTRAM?
http://en.wikipedia.org/wiki/Twin_Transistor_RAM
"TTRAM is similar to conventional one-transistor, one-capacitor DRAM
in concept, but eliminates the capacitor by relying on the floating
body effect inherent in a silicon on insulator (SOI) manufacturing
process."
Would TTRAM fit the category of solid-state purely-electric CFDVRAM?
What about TTRAM?
http://en.wikipedia.org/wiki/Twin_Transistor_RAM
"TTRAM is similar to conventional one-transistor, one-capacitor DRAM
in concept, but eliminates the capacitor by relying on the floating
body effect inherent in a silicon on insulator (SOI) manufacturing
process."
Would TTRAM fit the category of solid-state purely-electric CFDVRAM?
J
Jasen Betts
Guest
On 2009-05-26, GreenXenon <glucegen1x@gmail.com> wrote:
the underlying substrate, originally considered a nuisance, but here
used to replace a part outright."
It uses capacitance.
"This effect causes capacitance to build up between the transistors and
the underlying substrate, originally considered a nuisance, but here
used to replace a part outright."
It uses capacitance.