Help verifying BAV99 device spice model

I wanted to verify the spice model for a Philips Semiconductor high
speed double diode (BAV99). It was the result of placing database part
in OrCAD capture. The datasheet is
http://www.semiconductors.philips.com/acrobat/datasheets/BAV99_4.pdf

I wanted to verify that this was a match, but as I looked at the PSpice
Reference Guide (pp 151), I could not determine if it was accurate due
to additional unknown values that are a part of the diode formulas. The
spice model provided is as follows.
Thanks

..MODEL BAV99 D
+ IS = 2.7838E-09
+ N = 1.8703
+ RS = 1.3548
+ EG = 1.0637
+ XTI = 1.5000
+ CJO = 0.6000E-12
+ VJ = 0.2000
+ M = 0.1000

The PSpice Reference manual describes the following diode model
parameters:

Model
Param Description Unit Default
----- ----------- ---- -------
AF flicker noise exponent 1.0
BV reverse breakdown knee voltage volt infinite
CJO zero-bias p-n capacitance farad 0.0
EG bandgap voltage (barrier height) eV 1.11
FC forward-bias depletion capacitance
coefficient 0.5
IBVL low-level reverse breakdown knee
current amp 0.0
IBV reverse breakdown knee current amp 1E-10
IKF high-injection knee current amp infinite
IS saturation current amp 1E-14
ISR recombination current parameter amp 0.0
KF flicker noise coefficient 0.0
M p-n grading coefficient 0.5
N emission coefficient 1.0
NBV reverse breakdown ideality factor 1.0
NBVL low-level reverse breakdown ideality
factor 1.0
NR emission coefficient for isr 2.0
RS parasitic resistance ohm 0.0
TBV1 bv temperature coefficient (linear) °C-1 0.0
TBV2 bv temperature coefficient (quadratic) °C-2 0.0
TIKF ikf temperature coefficient (linear) °C-1 0.0
TRS1 rs temperature coefficient (linear) °C-1 0.0
TRS2 rs temperature coefficient (quadratic) °C-2 0.0
TT transit time sec 0.0
T_ABS absolute temperature °C
T_MEASURED measured temperature °C
T_REL_GLOBAL relative to current temperature °C
T_REL_LOCAL Relative to AKO model temperature °C
VJ p-n potential volt 1.0
XTI IS temperature exponent 3.0