L
lerameur
Guest
Hello
I hope I can clear up some confusion about reading specification sheet
on hall sensor.
First the UGN3503U chip. on the web page
http://web-ee.com/schematics/instrumentation/build-gaussmeter/
the author calculates the Gauss with the following equation:
The hall effect device has a sensitivity of 2.5mV/G which, when you
invert
it, is 1G/2.5mV or (multiplying top and bottom by 1000) 1000G/V.
Now, you need to find out how many volts the output changed.
It changed (2.48-4.56)V = -2.08V. So, we end up with B = -2.08V *
1000G/V =
-2080G, and it is a South pole since it is negative.
it makes sense so far because the spec sheet do not tell us anything
about the maximum Gauss (voltage output) or could it be the maximum
sensitivity ( 900Gauss).
Now take a look at the ss495 chip , the spec sheet shows a graph from
-640 to 640 Gauss, But from the calculation above we would get a swing
of -1600 to +1600 Gauss.
Do we choose the graph or the mV/Gauss approach ? which one is
correct?
K
I hope I can clear up some confusion about reading specification sheet
on hall sensor.
First the UGN3503U chip. on the web page
http://web-ee.com/schematics/instrumentation/build-gaussmeter/
the author calculates the Gauss with the following equation:
The hall effect device has a sensitivity of 2.5mV/G which, when you
invert
it, is 1G/2.5mV or (multiplying top and bottom by 1000) 1000G/V.
Now, you need to find out how many volts the output changed.
It changed (2.48-4.56)V = -2.08V. So, we end up with B = -2.08V *
1000G/V =
-2080G, and it is a South pole since it is negative.
it makes sense so far because the spec sheet do not tell us anything
about the maximum Gauss (voltage output) or could it be the maximum
sensitivity ( 900Gauss).
Now take a look at the ss495 chip , the spec sheet shows a graph from
-640 to 640 Gauss, But from the calculation above we would get a swing
of -1600 to +1600 Gauss.
Do we choose the graph or the mV/Gauss approach ? which one is
correct?
K