D
David Moreno
Guest
Hi !
I'm currently working in a fast switching current mirror to charge
linearly a capacitor. The circuit is a normal current mirror with
a multiplexor attached to the base of the second transistor and a
voltage
generator to switch the current throught it base.
In the simulation I've found that when you rise the frequency (at
50MHz or so)
the current mirror is not fast enought to switch, and a delay appears
that
makes the current throught the capacitor to lower. I'm intriguing in
this
because the transistor that I'm using are known to work up to 5-6GHz,
and the
frecuency of the switching is well below that.
In the practice the results are simply that the current mirrored is
not
the same as the origin current, and the diference increases when you
rise
the frecuency.
And finally the question: Some way to make this work faster or better
the response at high frecuencies ?
Thanks a lot ! =D
--------------------------------------------------------------------------------------
* E:\ALIENFILES\electronica\current mirror\espejo bft93.asc
X§Q1 N003 N003 N001 BFT93
X§Q2 Uc N004 N001 BFT93
C1 Uc 0 47pF
V1 N001 0 5
I1 N003 0 PULSE(0 1mA 0 0.1ns 0.1ns 5ns 10ns)
V2 N002 0 PULSE(0 5 0 0.1ns 0.1ns 5ns 10ns)
S1 N003 N004 N002 0 miswitch
S2 N004 N001 0 N002 miswitch
..inc "E:\ALIENFILES\electronica\spice\bft93.spice"
..tran 240n
..model miswitch SW(Ron=1. Roff=1MEG Vt=2.5V Vh=0 Lser=0 Vser=0)
..ic V(Uc)=0V
..backanno
..end
--------------------------------------------------------------------------------------------
bft93.spice
* Filename: BFT93_SPICE.PRM
* BFT93 SPICE MODEL
* PHILIPS SEMICONDUCTORS
* Date : September 1995
*
* PACKAGE : SOT23 DIE MODEL : BFT93
* 1: COLLECTOR; 2: BASE; 3: EMITTER;
..SUBCKT BFT93 1 2 3
Q1 6 5 7 7 BFT93
* SOT23 parasitic model
Lb 4 5 .4nH
Le 7 8 .83nH
L1 2 4 .35nH
L2 1 6 .17nH
L3 3 8 .35nH
Ccb 4 6 0.071pF
Cbe 4 8 0.002pF
Cce 6 8 0.071pF
* PHILIPS SEMICONDUCTORS Version:
2.0
* Filename: BFT93.PRM Date:
March 1992
*
..MODEL BFT93 PNP
+ IS = 8.35127E-016
+ BF = 4.85648E+001
+ NF = 1.00043E+000
+ VAF = 1.90118E+001
+ IKF = 1.46824E-001
+ ISE = 9.09455E-014
+ NE = 1.74928E+000
+ BR = 1.21832E+001
+ NR = 9.97694E-001
+ VAR = 3.37492E+000
+ IKR = 6.74270E-003
+ ISC = 2.34297E-014
+ NC = 1.44993E+000
+ RB = 1.00000E+001
+ IRB = 1.00000E-006
+ RBM = 1.00000E+001
+ RE = 2.00000E-001
+ RC = 3.80000E+000
+ EG = 1.11000E+000
+ XTI = 3.00000E+000
+ CJE = 1.57034E-012
+ VJE = 6.00000E-001
+ MJE = 3.82204E-001
+ TF = 1.48531E-011
+ XTF = 2.20970E+000
+ VTF = 2.98987E+000
+ ITF = 1.43721E-002
+ CJC = 1.99525E-012
+ VJC = 5.84499E-001
+ MJC = 2.81320E-001
..ENDS
------------------------------------------------------------
I'm currently working in a fast switching current mirror to charge
linearly a capacitor. The circuit is a normal current mirror with
a multiplexor attached to the base of the second transistor and a
voltage
generator to switch the current throught it base.
In the simulation I've found that when you rise the frequency (at
50MHz or so)
the current mirror is not fast enought to switch, and a delay appears
that
makes the current throught the capacitor to lower. I'm intriguing in
this
because the transistor that I'm using are known to work up to 5-6GHz,
and the
frecuency of the switching is well below that.
In the practice the results are simply that the current mirrored is
not
the same as the origin current, and the diference increases when you
rise
the frecuency.
And finally the question: Some way to make this work faster or better
the response at high frecuencies ?
Thanks a lot ! =D
--------------------------------------------------------------------------------------
* E:\ALIENFILES\electronica\current mirror\espejo bft93.asc
X§Q1 N003 N003 N001 BFT93
X§Q2 Uc N004 N001 BFT93
C1 Uc 0 47pF
V1 N001 0 5
I1 N003 0 PULSE(0 1mA 0 0.1ns 0.1ns 5ns 10ns)
V2 N002 0 PULSE(0 5 0 0.1ns 0.1ns 5ns 10ns)
S1 N003 N004 N002 0 miswitch
S2 N004 N001 0 N002 miswitch
..inc "E:\ALIENFILES\electronica\spice\bft93.spice"
..tran 240n
..model miswitch SW(Ron=1. Roff=1MEG Vt=2.5V Vh=0 Lser=0 Vser=0)
..ic V(Uc)=0V
..backanno
..end
--------------------------------------------------------------------------------------------
bft93.spice
* Filename: BFT93_SPICE.PRM
* BFT93 SPICE MODEL
* PHILIPS SEMICONDUCTORS
* Date : September 1995
*
* PACKAGE : SOT23 DIE MODEL : BFT93
* 1: COLLECTOR; 2: BASE; 3: EMITTER;
..SUBCKT BFT93 1 2 3
Q1 6 5 7 7 BFT93
* SOT23 parasitic model
Lb 4 5 .4nH
Le 7 8 .83nH
L1 2 4 .35nH
L2 1 6 .17nH
L3 3 8 .35nH
Ccb 4 6 0.071pF
Cbe 4 8 0.002pF
Cce 6 8 0.071pF
* PHILIPS SEMICONDUCTORS Version:
2.0
* Filename: BFT93.PRM Date:
March 1992
*
..MODEL BFT93 PNP
+ IS = 8.35127E-016
+ BF = 4.85648E+001
+ NF = 1.00043E+000
+ VAF = 1.90118E+001
+ IKF = 1.46824E-001
+ ISE = 9.09455E-014
+ NE = 1.74928E+000
+ BR = 1.21832E+001
+ NR = 9.97694E-001
+ VAR = 3.37492E+000
+ IKR = 6.74270E-003
+ ISC = 2.34297E-014
+ NC = 1.44993E+000
+ RB = 1.00000E+001
+ IRB = 1.00000E-006
+ RBM = 1.00000E+001
+ RE = 2.00000E-001
+ RC = 3.80000E+000
+ EG = 1.11000E+000
+ XTI = 3.00000E+000
+ CJE = 1.57034E-012
+ VJE = 6.00000E-001
+ MJE = 3.82204E-001
+ TF = 1.48531E-011
+ XTF = 2.20970E+000
+ VTF = 2.98987E+000
+ ITF = 1.43721E-002
+ CJC = 1.99525E-012
+ VJC = 5.84499E-001
+ MJC = 2.81320E-001
..ENDS
------------------------------------------------------------