R
ROBIN MARSTRAND
Guest
Hello All.
Yet another one....
I am working with Capture 9.2 and PSpice.
The report from simulation shows IGBT's (as below) which are from Infineon
(Siemens). They have Spice models attached and are shown as such in
"Properties". However; when I try to edit the model, from within the
Shematic page, it searches for it but cannot found it.
How do I ensure that they are defined?
ERROR -- Subcircuit sgp30n60 used by X_X8 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X5 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X1 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X12 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X9 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X6 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X2 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X10 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X7 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X3 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X11 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X4 is undefined
Here is the model text from Model Editor (which is Level I and looks pretty
complete - even defines .SUBCIRCUIT):-
*************************************
..SUBCKT SGP30N60 ano gate kat
*****************
* Parameters of Infineon SGP30N60
* units cm, s, A, V
..PARAM
+q = 1.6E-19 eps0 = 8.85E-14 epsi = 11.8
+ni = 1.45E10
+un = 1350 up = 450
+A = 0.207 Agd = 0.151 wb = 95.5E-4
+Nb = 1.45E14 taub = 30E-6
+Ise = 11.4E-12 Cje = 176.0p
+Cjs = 176.0p
+Vth = 4.5 Kp = 6.85
+Cox = 10.15n Cgs = 1890p
+Rs = 11.5m Rg = 3.2
+Lc = 3E-4
****************************************************************************
************************************
MFET d g s s MOS
DE e de D1
DS kat d D2
**************************
..MODEL MOS NMOS (LEVEL=1,VTO={VTH},KP={KP})
..MODEL D1 D (IS={ISE},CJO={CJE})
..MODEL D2 D (IS={ISE},CJO={CJS},TT={Taub})
*******************************************
RG gate g {Rg}
RS s kat {Rs}
RM d s 100k
RC d dr {0.1*Rg}
CGS g s {Cgs}
COX g ox {Cox}
*****************************
* voltage across depletion region below gate:
EDEP dr ox VALUE = {Vdep(V(d,g))}
* current through base resistor:
GIA ano e VALUE = {V(ano,e)/Rb(V(b))}
* charge control:
GIQ e d VALUE = {IQ(V(d,kat),I(VDXJ),I(VINE),V(b))}
* collector (hole) current:
GIPC e kat VALUE = {IPC(V(d,kat),I(VDXJ),I(VINE),V(b))}
************************************************
* current probe for electron current at emitter:
VINE de d 0
*****************************
* subcircuit for base charge:
*****************************
CQB b 0 1u
RQB b 0 {Taub/1u}
GIB 0 b VALUE {IQ(V(d,kat),I(VDXJ),I(VINE),V(b))}
**************************************************
* subcircuit for time derivative dxj/dt = I(VDXJ):
**************************************************
EXJ xj1 0 VALUE {1e6*xj(V(d,kat))}
CXJ xj 0 1u
VDXJ xj1 xj2 0
RXJ xj2 xj 10m
****************************************************************************
***********************************
..PARAM D = {2*0.026*un*up/(un+up)}
..PARAM L = {SQRT(D*Taub)}
..PARAM QN = {q*A*wb*Nb}
..PARAM Fpc = {4*Lc*Ise/(3.14*wb*un*0.026*q*A*ni*q*A*ni)}
..PARAM VPT = {q*Nb*wb*wb/(2*eps0*epsi)}
..PARAM VN = {q*Nb*eps0*epsi*(Agd/Cox)*(Agd/Cox)}
..PARAM XF = {SQRT(2*eps0*epsi/(q*Nb))}
*************************************************
..FUNC Vdep(V) {MAX(V,0)+VN*(1-SQRT(1+2*MAX(V,0)/VN))}
..FUNC Qeff(Z) {(un+up)*MAX((2-Fpc*Z*1E-6)*Z*1E-6,QN*1E-8)}
..FUNC Rb(Z) {wb*wb*LOG(1+Qeff(Z)/(un*QN+(un+up)*Fpc*Z*Z*1E-12))/Qeff(Z)}
..FUNC xj(V) {XF*SQRT(MAX(1+V,0))}
..FUNC w(V) {MAX(1e-4,wb-xj(V))}
..FUNC Td(V,X) {(0.1/D)*w(V)*w(V)/(1+w(V)*MAX(X,0)/(12*D))}
..FUNC F1(V) {Taub*(COSH(w(V)/L)-1)}
..FUNC F2(V,X) {0.5*(1+TANH(w(V)*X/(6*D)))}
..FUNC QS0(V) {q*A*L*ni*TANH(0.5*w(V)/L)}
..FUNC Qb0(V,Y) {QS0(V)*SQRT(MAX(Y/ISE,0))}
..FUNC IQ(V,X,Y,Z) {Qb0(V,Y)/Taub+(Qb0(V,Y)-Z*1e-6)/(Td(V,X)+1e-18)}
..FUNC IPC(V,X,Y,Z)
{(1/3)*(Y+IQ(V,X,Y,Z))+(4/3)*(Qb0(V,Y)/F1(V)+MAX(Qb0(V,Y)/Taub-IQ(V,X,Y,Z),0
)*F2(V,X))}
****************************************************************
..ENDS
***************************************************************************
Yet another one....
I am working with Capture 9.2 and PSpice.
The report from simulation shows IGBT's (as below) which are from Infineon
(Siemens). They have Spice models attached and are shown as such in
"Properties". However; when I try to edit the model, from within the
Shematic page, it searches for it but cannot found it.
How do I ensure that they are defined?
ERROR -- Subcircuit sgp30n60 used by X_X8 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X5 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X1 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X12 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X9 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X6 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X2 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X10 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X7 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X3 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X11 is undefined
ERROR -- Subcircuit sgp30n60 used by X_X4 is undefined
Here is the model text from Model Editor (which is Level I and looks pretty
complete - even defines .SUBCIRCUIT):-
*************************************
..SUBCKT SGP30N60 ano gate kat
*****************
* Parameters of Infineon SGP30N60
* units cm, s, A, V
..PARAM
+q = 1.6E-19 eps0 = 8.85E-14 epsi = 11.8
+ni = 1.45E10
+un = 1350 up = 450
+A = 0.207 Agd = 0.151 wb = 95.5E-4
+Nb = 1.45E14 taub = 30E-6
+Ise = 11.4E-12 Cje = 176.0p
+Cjs = 176.0p
+Vth = 4.5 Kp = 6.85
+Cox = 10.15n Cgs = 1890p
+Rs = 11.5m Rg = 3.2
+Lc = 3E-4
****************************************************************************
************************************
MFET d g s s MOS
DE e de D1
DS kat d D2
**************************
..MODEL MOS NMOS (LEVEL=1,VTO={VTH},KP={KP})
..MODEL D1 D (IS={ISE},CJO={CJE})
..MODEL D2 D (IS={ISE},CJO={CJS},TT={Taub})
*******************************************
RG gate g {Rg}
RS s kat {Rs}
RM d s 100k
RC d dr {0.1*Rg}
CGS g s {Cgs}
COX g ox {Cox}
*****************************
* voltage across depletion region below gate:
EDEP dr ox VALUE = {Vdep(V(d,g))}
* current through base resistor:
GIA ano e VALUE = {V(ano,e)/Rb(V(b))}
* charge control:
GIQ e d VALUE = {IQ(V(d,kat),I(VDXJ),I(VINE),V(b))}
* collector (hole) current:
GIPC e kat VALUE = {IPC(V(d,kat),I(VDXJ),I(VINE),V(b))}
************************************************
* current probe for electron current at emitter:
VINE de d 0
*****************************
* subcircuit for base charge:
*****************************
CQB b 0 1u
RQB b 0 {Taub/1u}
GIB 0 b VALUE {IQ(V(d,kat),I(VDXJ),I(VINE),V(b))}
**************************************************
* subcircuit for time derivative dxj/dt = I(VDXJ):
**************************************************
EXJ xj1 0 VALUE {1e6*xj(V(d,kat))}
CXJ xj 0 1u
VDXJ xj1 xj2 0
RXJ xj2 xj 10m
****************************************************************************
***********************************
..PARAM D = {2*0.026*un*up/(un+up)}
..PARAM L = {SQRT(D*Taub)}
..PARAM QN = {q*A*wb*Nb}
..PARAM Fpc = {4*Lc*Ise/(3.14*wb*un*0.026*q*A*ni*q*A*ni)}
..PARAM VPT = {q*Nb*wb*wb/(2*eps0*epsi)}
..PARAM VN = {q*Nb*eps0*epsi*(Agd/Cox)*(Agd/Cox)}
..PARAM XF = {SQRT(2*eps0*epsi/(q*Nb))}
*************************************************
..FUNC Vdep(V) {MAX(V,0)+VN*(1-SQRT(1+2*MAX(V,0)/VN))}
..FUNC Qeff(Z) {(un+up)*MAX((2-Fpc*Z*1E-6)*Z*1E-6,QN*1E-8)}
..FUNC Rb(Z) {wb*wb*LOG(1+Qeff(Z)/(un*QN+(un+up)*Fpc*Z*Z*1E-12))/Qeff(Z)}
..FUNC xj(V) {XF*SQRT(MAX(1+V,0))}
..FUNC w(V) {MAX(1e-4,wb-xj(V))}
..FUNC Td(V,X) {(0.1/D)*w(V)*w(V)/(1+w(V)*MAX(X,0)/(12*D))}
..FUNC F1(V) {Taub*(COSH(w(V)/L)-1)}
..FUNC F2(V,X) {0.5*(1+TANH(w(V)*X/(6*D)))}
..FUNC QS0(V) {q*A*L*ni*TANH(0.5*w(V)/L)}
..FUNC Qb0(V,Y) {QS0(V)*SQRT(MAX(Y/ISE,0))}
..FUNC IQ(V,X,Y,Z) {Qb0(V,Y)/Taub+(Qb0(V,Y)-Z*1e-6)/(Td(V,X)+1e-18)}
..FUNC IPC(V,X,Y,Z)
{(1/3)*(Y+IQ(V,X,Y,Z))+(4/3)*(Qb0(V,Y)/F1(V)+MAX(Qb0(V,Y)/Taub-IQ(V,X,Y,Z),0
)*F2(V,X))}
****************************************************************
..ENDS
***************************************************************************