E
ER Yost
Guest
Hello,
Is there anyone who can guide me on what parameters and/or level of
model would be most effective for simulating power dissipation due to
the channel resistance (and other factors) of the MOS? I've been
searching the web for some time and found information about parameters
and levels but very little in the way of suggestions. Any guidance is
appreciated.
ERY
Is there anyone who can guide me on what parameters and/or level of
model would be most effective for simulating power dissipation due to
the channel resistance (and other factors) of the MOS? I've been
searching the web for some time and found information about parameters
and levels but very little in the way of suggestions. Any guidance is
appreciated.
ERY