R
ron
Guest
Hello all
This is my first post to this group !
I have recently purchased circuitmaker 2000
which I use to study simple radio circuits etc
Is there a way of creating a dual gate mosfet device such as the BF908
(model below) SOT 143
and linking the device symbol to the subcircuit below
so that I can simulate some simple RF designs using this device.
What I really need is a blow by blow account of the proceedure involved.
Is there anyone experienced on the group who could help me with this and
email direct as nothing I try seems to work !
ronpriest@hotmail.com.
----------------------------------------------------snip
* BF908 SPICE MODEL OCTOBER 1993 PHILIPS SEMICONDUCTORS
* ENVELOPE SOT143
* 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1;
..SUBCKT BF908 1 2 3 4
L10 1 10 L=0.12N
L20 2 20 L=0.12N
L30 3 30 L=0.12N
L40 4 40 L=0.12N
L11 10 11 L=1.20N
L21 20 21 L=1.20N
L31 30 31 L=1.20N
L41 40 41 L=1.20N
C13 10 30 C=0.085P
C14 10 40 C=0.085P
C21 10 20 C=0.017P
C23 20 30 C=0.085P
C24 20 40 C=0.005P
D11 42 11 ZENER
D12 42 41 ZENER
D21 32 11 ZENER
D22 32 31 ZENER
RS 10 12 R=100
MOS1 61 41 11 12 GATE1 L=1.1E-6 W=1750E-6
MOS2 21 31 61 12 GATE2 L=2.0E-6 W=1750E-6
..MODEL ZENER
+ D BV=10 CJO=1.2E-12 RS=10
..MODEL GATE1
+ NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=33E-9
+ NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
..MODEL GATE2
+ NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=33E-9
+ NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.7E-12 CBS=0.5E-12
..ENDS BF908
-------------------------------------------------------
This is my first post to this group !
I have recently purchased circuitmaker 2000
which I use to study simple radio circuits etc
Is there a way of creating a dual gate mosfet device such as the BF908
(model below) SOT 143
and linking the device symbol to the subcircuit below
so that I can simulate some simple RF designs using this device.
What I really need is a blow by blow account of the proceedure involved.
Is there anyone experienced on the group who could help me with this and
email direct as nothing I try seems to work !
ronpriest@hotmail.com.
----------------------------------------------------snip
* BF908 SPICE MODEL OCTOBER 1993 PHILIPS SEMICONDUCTORS
* ENVELOPE SOT143
* 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1;
..SUBCKT BF908 1 2 3 4
L10 1 10 L=0.12N
L20 2 20 L=0.12N
L30 3 30 L=0.12N
L40 4 40 L=0.12N
L11 10 11 L=1.20N
L21 20 21 L=1.20N
L31 30 31 L=1.20N
L41 40 41 L=1.20N
C13 10 30 C=0.085P
C14 10 40 C=0.085P
C21 10 20 C=0.017P
C23 20 30 C=0.085P
C24 20 40 C=0.005P
D11 42 11 ZENER
D12 42 41 ZENER
D21 32 11 ZENER
D22 32 31 ZENER
RS 10 12 R=100
MOS1 61 41 11 12 GATE1 L=1.1E-6 W=1750E-6
MOS2 21 31 61 12 GATE2 L=2.0E-6 W=1750E-6
..MODEL ZENER
+ D BV=10 CJO=1.2E-12 RS=10
..MODEL GATE1
+ NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=33E-9
+ NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
..MODEL GATE2
+ NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=33E-9
+ NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.7E-12 CBS=0.5E-12
..ENDS BF908
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