30V FET achieves 1-mΩ maximum on-resistance

[news]

Fairchild Semiconductor used its PowerTrench process in building the new FDMS7650 30V MOSFET. The company guarantees the device for a 0.99-mΩ maximum on-resistance at 36A with a 10V gate drive; resistance rises to a maximum of 1.7 mΩ at 125°C.

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